The National Renewable Energy Laboratory (NREL) of the United States recently confirmed that the conversion efficiency of a new “double junction†thin-film solar cell technology from Alta Devices reached 30.8%.
Chris Norris, president and chief executive officer of Alta Devices stated: “Alta Devices has been refreshing its efficiency record since 2010. This new double-junction battery has a record of 30.8% conversion efficiency, which proves our technology Our world-class team is an important step towards our goal of 38% battery efficiency."
Alta Devices said its new double-junction technology enables indium gallium phosphide (In GaP) in the second junction as an absorber layer on top of a single junction cell base.
It is well known that indium gallium phosphide enables high-energy photons that are more efficient than single-junction gallium arsenide (GaAs) cells. Alta Devices said it is currently shipping its single junction GaAs technology.
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